| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor which uses an SOI substrate and in which elements are isolated by a LOCOS oxide film in an element region, wherein a leakage current is prevented from generating through a silicon layer under the end of the LOCOS oxide film. SOLUTION: This semiconductor device comprises the MOS transistor which has a source region 9 and a drain region 11 formed at an interval therebetween in an LOCOS oxide film 7 formed in a silicon layer 5 of the SOI substrate and the silicon layer 5 of the element region surrounded by the LOCOS oxide film 7, a channel region formed between the source diffusion layer 9 and the drain diffusion layer 11, and a gate electrode 17 formed through a gate insulating film 15 on the channel region. The gate electrode 17 is formed at an interval from the LOCOS oxide film 7, and the source region 9 and the drain region 11 are formed at an interval from the LOCOS oxide film 7 across an opposite conductivity type region 19 between the source region 9 and the drain region 11, and the LOCOS oxide film 7. COPYRIGHT: (C)2008,JPO&INPIT
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