发明名称 |
Vertical semiconductor light-emitting device and method of manufacturing the same |
摘要 |
Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.
|
申请公布号 |
US2008054291(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20060513183 |
申请日期 |
2006.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-SOO;SHIN KYU-HO;CHO JAE-HEE |
分类号 |
H01L21/00;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|