| 摘要 |
<p>A method of forming a ruthenium film for a metal wiring structure is provided to prevent a surface of metal from being damaged even when the surface is exposed to air or chemicals by depositing 1nm of ruthenium film onto the metal. In a method of forming a ruthenium film, gas of a ruthenium precursor is supplied to a reaction chamber so that the gas of the ruthenium precursor is adsorbed onto a substrate. Excited reducing gas is supplied into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate. The above two steps are repeated so that the ruthenium film is formed on the substrate. The ruthenium precursor includes a ruthenium complex containing a non-cyclic dienyl. The ruthenium complex has a structure of Xa-Ru-Xb, wherein at least one of Xa or Xb is the non-cyclic dienyl.</p> |
