| 摘要 |
A through substrate which comprises a silicon substrate (10) having a through hole (19) penetrating a front surface (11) and a back surface (12), a oxidized silicon film (13) being provided along the inner wall surface of the through hole (19), layers (14, 15) comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film (13), and a Cu plating layer (18) which has been grown from a Cu seed layer (17) along the inner wall surface of layers (14, 15) comprising Zn and Cu, respectively, via an insulating layer (16) between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk. ® KIPO & WIPO 2008 |
