发明名称 |
COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS |
摘要 |
<p>The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.</p> |
申请公布号 |
WO2008027421(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
WO2007US18980 |
申请日期 |
2007.08.29 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
DE REGE THESAURO, FRANCESCO;GRUMBINE, STEVEN;CARTER, PHILLIP;LI, SHOUTIAN;ZHANG, JIAN;SCHROEDER, DAVID;TSAI, MING-SHIH |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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