发明名称 LOW INDUCTANCE POWER SEMICONDUCTOR MODULE FOR POWER CIRCUIT SUBJECTED TO CURRENT APPLICATION
摘要 <P>PROBLEM TO BE SOLVED: To introduce an easy-to-manufacture power semiconductor module for a power circuit subjected to current application having a low parasitic inductance. <P>SOLUTION: Two first current valves (100, 110) having a common terminal (120) of positive polarity and two AC voltage terminals (130, 140) separated electrically are arranged in a first part module (1), and two second current valves (200, 210) having a common terminal (220) of negative polarity and two AC voltage terminals (230, 240) separated electrically are arranged in a second part module (2) wherein the first current valves, the second current valves, and the AC voltage terminals are arranged adjacently at a narrow interval. Consequently, each face being surrounded by the current flow during commutation is reduced between the first current valves or between the second current valves, and each current valve has a conduction direction and an interruption direction which can be switched. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008054495(A) 申请公布日期 2008.03.06
申请号 JP20070211809 申请日期 2007.08.15
申请人 SEMIKRON ELEKTRONIK GMBH & CO KG 发明人 SCHREIBER DEJAN
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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