摘要 |
<P>PROBLEM TO BE SOLVED: To introduce an easy-to-manufacture power semiconductor module for a power circuit subjected to current application having a low parasitic inductance. <P>SOLUTION: Two first current valves (100, 110) having a common terminal (120) of positive polarity and two AC voltage terminals (130, 140) separated electrically are arranged in a first part module (1), and two second current valves (200, 210) having a common terminal (220) of negative polarity and two AC voltage terminals (230, 240) separated electrically are arranged in a second part module (2) wherein the first current valves, the second current valves, and the AC voltage terminals are arranged adjacently at a narrow interval. Consequently, each face being surrounded by the current flow during commutation is reduced between the first current valves or between the second current valves, and each current valve has a conduction direction and an interruption direction which can be switched. <P>COPYRIGHT: (C)2008,JPO&INPIT |