METHOD OF DETERMINING MEMORY STATE OF RESISTIVE MEMORY CELL AND DEVICE MEASURING MEMORY STATE OF RESISTIVE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To determine the memory state of a resistive memory cell including a first electrode, a second electrode and an active material being arranged between the first electrode and the second electrode.

SOLUTION: A read capacity of the memory cell is charged or discharged by applying a voltage between the first electrode and the second electrode. The memory state of the memory cell is determined in accordance with a change of the voltage between the first electrode and the second electrode at the charge or discharge of the read capacity. The determination of the memory state includes a sampling operation of the voltage of the second electrode, and a corresponding voltage sampling value is compared with at least one reference voltage.

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