| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a phase change memory to be efficiently heated with a resistance value of an optimum heater electrode and the smallest current, and a manufacturing method of the semiconductor device having a phase change memory easily mass-produced and stably operating. <P>SOLUTION: The heater electrode 1 comprises a plurality of heater electrode layers 1-1 to 1-6 each made of a high-resistance metal material. The specific resistance of the plurality of electrodes 1 is gradually increased from a lower electrode side 7 to a phase change film side 3, so that the heater electrode layer 1-6 of a region 2 contacting the phase change film 3 can obtain the maximum specific resistance. The upper heather electrode layer 1-6 having the maximum specific resistance can realize a high temperature efficiently. Accordingly, rewriting operation can be efficiently executed with a small rewriting current. <P>COPYRIGHT: (C)2008,JPO&INPIT |
