INSULATING FILM FORMING METHOD, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an insulating film forming method and a substrate processing apparatus which can form an insulating film having excellent quality in both film thickness uniformity and film composition uniformity by using the ALD method.

SOLUTION: In the insulating film forming method, a cycle A in which O3at a low flow rate is supplied onto a substrate and is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≥1), and then a cycle B in which O3at a high flow rate is supplied onto the substrate and is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≥1). These insulating film forming cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

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