| 摘要 |
<P>PROBLEM TO BE SOLVED: To separate a semiconductor substrate and a supporting substrate (device layer side) surely in a short time in a process for fabricating a semiconductor device employing ELO (expitaxial lift off). <P>SOLUTION: The process for fabricating a semiconductor device comprises a step for separating a semiconductor substrate 1 and a device layer 4 by forming a predetermined device in the device layer 4 which is grown on the semiconductor substrate 1 through a sacrificial layer 2, and then etching the sacrificial layer 2 under a state where a supporting substrate 10 is stuck to the device layer 4. A trench (d) is formed previously from the device layer 4 to the sacrificial layer 2 when the sacrificial layer 2 is removed, and etching liquid is made to permeate up to the sacrificial layer 2 through the trench (d). <P>COPYRIGHT: (C)2008,JPO&INPIT |
