| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of a short channel effect, and leakage current, in a field-effect transistor in which metal electrodes are formed as a source and drain. SOLUTION: This semiconductor device including the field-effect transistor is provided with a gate electrode 15 formed through a gate insulating layer 14 on a semiconductor substrate 11, a source and drain 12, 13 which are made of metal electrodes, and of which the interfaces with the semiconductor substrate 11 are formed with Schottky barriers, respectively. In an interface between at least one of the metal electrodes at a source side and a drain side, and the semiconductor substrate 11, for holes or electrons, modulation region 101, 102 for forming a barrier lower than the Schottky barriers between the substrate 11 and the metal electrodes are formed. COPYRIGHT: (C)2008,JPO&INPIT
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