| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxide film selective wet etching solution that can effectively remove a BPSG (silicon) oxide film by suppressing etching of a metal silicide film to increase the etching selectivity of a silicon oxide film. SOLUTION: The wet etching solution includes: hydrogen fluoride in an amount of 0.1-3% by weight of the etching solution; one or more inorganic acids selected from the group consisting of nitric acid, sulfuric acid, and hydrochloric acid, in an amount of 10-40% by weight of the etching solution; and water in an amount of the remainder percent by weight of the etching solution. The present invention also provides: a wet etching solution that comprises ammonium fluoride at a specific concentration, an organic acid compound having one or more carboxyl groups, and water; and a wet etching solution that comprises hydrogen fluoride in a specific amount, ammonium fluoride in a specific amount, an organic acid compound having one or more carboxyl groups, alcohol, and water. COPYRIGHT: (C)2008,JPO&INPIT
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