OXIDE FILM FORMING METHOD AND APPARATUS THEREFOR

摘要

PROBLEM TO BE SOLVED: To form an oxide film excellent in electric characteristics in a film forming process at not more than 200°C while improving utilization efficiency of a material gas. SOLUTION: An oxide film forming apparatus 1 irradiates a substrate 7 with a light in an ultraviolet region, and supplies a material gas G1 made of an organic silicon and an ozone gas G2 to the substrate 7, thereby forming an oxide film on the surface of the substrate 7. The substrate 7 is housed in a processing furnace 2. A piping 3 allows the material gas G1 to be mixed with the ozone gas G2 at a room temperature and supplies a mixed gas to the substrate 7 in the processing furnace 2. A light source 5 irradiates the substrate 7 with a light having a wavelength longer than 210 nm as a light of the ultraviolet region. The mixing amount of the material gas G1 to the ozone gas G2 to be supplied to the piping 3 is set so as to be not less than a chemical equivalent enough to completely oxidize at least the material gas G1. COPYRIGHT: (C)2008,JPO&INPIT