| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method for a semiconductor device capable of easily controlling the nitrogen composition of a gate electrode, in a MOSFET having the gate electrode composed of a metallic nitride film. SOLUTION: The manufacturing method for the semiconductor device has a process (a) for forming an insulating film 15 on a semiconductor substrate 11, and a process (b) for forming a first conductive film 16 as the film consisting of a material, containing no nitrogen on the insulating film 15. The manufacturing method further has a process (c) for forming a second conductive film 18 as the film comprising the material containing nitrogen on the first conductive film 16, and a process (d) for forming the gate electrode by patterning the second conductive film 18 and the first conductive film 16, while forming a gate insulating film by patterning the insulating film 15. COPYRIGHT: (C)2008,JPO&INPIT
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