| 摘要 |
PROBLEM TO BE SOLVED: To improve quality of polycrystalline silicon in dehydrogenating an amorphous silicon formed outside a display region of a substrate and forming the polycrystalline silicon. SOLUTION: The method of manufacturing the display device has a step of forming a plurality of pixels each having a TFT element employing the amorphous silicon on the display region of the substrate, and a step of forming a driving circuit having a plurality of semiconductor elements employing the polycrystalline silicon outside of the display region. In this method, only the amarphous silicon on a region where the driving circuit is formed and surrounding region thereof is irradiated with a first continuous oscillation laser and dehydrogenated, and then only the dehydrogenated region is irradiated with a second continuous oscillation laser to make the amorphous silicon into the polycrystalline silicon. The region to be irradiated with the first continuous oscillation laser is wider than the region to be irradiated with the second continuous oscillation laser. COPYRIGHT: (C)2008,JPO&INPIT |
