发明名称 HIGH-PURITY TRIALKYLGALLIUM AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a high-purity trialkylgallium and to provide a method for producing a high-purity trialkylgallium by a simple method. SOLUTION: The high-purity trialkylgallium has a silicon atom content of ≤0.1 mass ppm. The high-purity trialkylgallium is produced by forming a gallium-diamine complex from the trialkylgallium and a diamine compound, collecting the complex from the reaction mixture by distillation and dissociating the diamine compound. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008050268(A) 申请公布日期 2008.03.06
申请号 JP20060224924 申请日期 2006.08.22
申请人 UBE IND LTD 发明人 NOGUCHI HIDETAKA;ISHICHI KOJI;MONOBE HIROYUKI;HIRATSUKA TORU;MATSUSHIGE KENJI
分类号 C07F5/00 主分类号 C07F5/00
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