| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor MIS type field effect transistor suitable for application to a power device. SOLUTION: The field effect transistor is composed by arranging a nitride semiconductor lamination structure section 2 on a sapphire substrate 41. The nitride semiconductor lamination structure section 2 comprises: an n-type AlGaN layer 9; an n-type GaN layer 5; a p-type GaN layer 6; and an n-type GaN layer 7. A trench 16 having a V-shaped section is formed at the nitride compound semiconductor lamination structure section 2, a gate insulation film is formed on a wall surface 17 in the trench 16, and further a gate electrode 20 is formed so that it opposes the wall surface 17 while sandwiching the gate insulation film 19. The n-type AlGaN layer 9 has an extraction section 10 extracted laterally from the nitride semiconductor lamination structure section 2. A drain electrode 15 is formed so that it is in contact with the extraction section 10. COPYRIGHT: (C)2008,JPO&INPIT
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