| 摘要 |
A dual gate Complementary Metal Oxide Semiconductor (CMOS) device includes a gate electrode of PMOS transistor implanted with germanium and indium ions and formed on a gate insulating film; a gate electrode of NMOS transistor not implanted with germanium and indium ions and formed on the gate insulating film; a source/drain region formed in a substrate exposed at both sides of the gate electrodes of the PMOS and NMOS transistors; and metal silicides formed on the source/drain region and the gate electrodes. A method for manufacturing a dual gate CMOS device, the method includes forming a gate insulating film; forming a polycrystalline silicon layer; forming an ion implantation mask; implanting germanium (Ge) and indium (In) ions into a PMOS transistor region of the substrate; and removing the ion implantation mask, patterning the polycrystalline silicon layer, and forming gate electrodes for PMOS and NMOS transistors.
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