发明名称 |
MONOLITHIC SILICON-BASED PHOTONIC RECEIVER |
摘要 |
An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.
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申请公布号 |
US2008054391(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20070837222 |
申请日期 |
2007.08.10 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
APSEL ALYSSA B.;PAPPU ANAND M.;CHEN CHENG P.;YIN TAO |
分类号 |
H01L31/11;H01L31/18 |
主分类号 |
H01L31/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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