| 摘要 |
Disclosed is a reaction device that includes a metal substrate and an R<SUB>2</SUB>O<SUB>3 </SUB>film. The R<SUB>2</SUB>O<SUB>3 </SUB>film has a crystal structure structured with at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu. The R<SUB>2</SUB>O<SUB>3 </SUB>film is formed on at least a portion of a surface of the metal substrate where an insulation property is needed.
|
