| 摘要 |
Under a sidewall formed over a side wall of a gate electrode, a low-concentration LDD region and a high-concentration LDD region which is extremely shallow and apart from a region under the gate electrode are formed. Further, a source/drain region is formed outside these LDD regions. Since the extremely shallow high-concentration LDD region is formed under the sidewall, even if hot carriers are accumulated in the sidewall, depletion due to the hot carriers can be suppressed. Further, since the high-concentration LDD region is formed apart from a region under the gate electrode, a transverse electric field in the channel is sufficiently relaxed, so that characteristic deterioration due to a threshold shift can be suppressed.
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