发明名称 SURFACE MODIFICATION OF INTERLAYER DIELECTRIC FOR MINIMIZING CONTAMINATION AND SURFACE DEGRADATION
摘要 <p>A semiconductor system includes: providing a dielectric layer (104); providing a conductor (108) in the dielectric layer (104), the conductor (108) exposed at the top of the dielectric layer (104); capping the exposed conductor (108); and modifying the surface of the dielectric layer (104); modifying the surface of the dielectric layer (104); wherein modifying the surface includes cleaning conductor (108) ions from the dielectric layer (104) by dissolving the conductor (108) in a low pH solution, dissolving the dielectric layer (104) under the conductor (108) ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer (800) on the dielectric layer (104).</p>
申请公布号 WO2007146848(A3) 申请公布日期 2008.03.06
申请号 WO2007US70820 申请日期 2007.06.09
申请人 LAM RESEARCH CORPORATION;KOLICS, ARTUR;LI, NANHAI;POLYANSKAYA, MARINA;WEISE, MARK;CORNEILLE, JASON 发明人 KOLICS, ARTUR;LI, NANHAI;POLYANSKAYA, MARINA;WEISE, MARK;CORNEILLE, JASON
分类号 H01L21/02 主分类号 H01L21/02
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