发明名称 Magnetowiderstandseffekt-Element
摘要 A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers (2, 3). The magnetic layers (3) containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto. <IMAGE>
申请公布号 DE69219936(T3) 申请公布日期 2008.03.06
申请号 DE1992619936T 申请日期 1992.03.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAITO, YOSHIAKI;OKUNO, SHINO;INOMATA, KOICHIRO
分类号 H01L43/10;G01R33/09 主分类号 H01L43/10
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