发明名称 |
Magnetowiderstandseffekt-Element |
摘要 |
A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers (2, 3). The magnetic layers (3) containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto. <IMAGE> |
申请公布号 |
DE69219936(T3) |
申请公布日期 |
2008.03.06 |
申请号 |
DE1992619936T |
申请日期 |
1992.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO, YOSHIAKI;OKUNO, SHINO;INOMATA, KOICHIRO |
分类号 |
H01L43/10;G01R33/09 |
主分类号 |
H01L43/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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