| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a boron nitride sintered compact having excellent corrosion resistance to high temperature ammonia gas, further having heat resistance and having low thermal conductivity, and to provide a heat insulating member for semiconductor fabrication equipment using the same. <P>SOLUTION: In the boron nitride sintered compact, bulk density calculated from mass and external diameter is 0.7 to 0.9 g/cm<SP>3</SP>, and thermal conductivity measured by a laser flash method in JIS R 1611 is ≤20 W/m K. The method for producing a boron nitride sintered compact is characterized in that a mixture comprising an acrylic resin of 10 to 40 pts.mass to 100 pts.mass of boron nitride powder is molded, subsequently, the acrylic resin is removed, so as to be a porous molded body having a bulk density of 0.9 to 1.2 g/cm<SP>3</SP>, and thereafter, ordinary pressure sintering is performed. The heat insulating member for a semiconductor fabrication equipment is composed of the boron nitride sintered compact. <P>COPYRIGHT: (C)2008,JPO&INPIT |
