| 摘要 |
PROBLEM TO BE SOLVED: To improve the resist selection ratio in the etching of an insulating film, where Si and C are set as the main compositions. SOLUTION: In the dry etching of an insulating film 10 containing silicon and carbon formed on a wafer 4 (substrate 9), a plasma 3 is generated from a gas mixture containing a first molecule gas containing carbon and fluorine and a second gas containing nitrogen, and RF bias of 2 MHz or lower is applied to an electrode 5 which installs the wafer 4. COPYRIGHT: (C)2008,JPO&INPIT
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