| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor epitaxial substrate with less amount of point defects. SOLUTION: The method for manufacturing a silicon carbide semiconductor epitaxial substrate includes the steps of preparing a silicon carbide single crystal substrate 10 having an offset angle of 2°or larger and 10°or smaller, permitting an epitaxial layer 11 formed of silicon carbide on the silicon carbide single crystal substrate under the temperature range of 1,400°C or higher and 1,650°C or lower with the chemical vapor deposition method, and conducting heat treatment of the epitaxial layer under the temperature range of 1,300°C or higher and 1,800°C or lower. COPYRIGHT: (C)2008,JPO&INPIT
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