| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD (chemical vapor deposition) equipment provided with a control mechanism of gas pre-heating, substrate heating, and electric field and magnetic field. SOLUTION: A CVD (chemical vapor deposition) reactor is provided with a reaction chamber, a gas tube heater, a substrate holder, a holder heater, a plurality of hot filaments, an electric field generator, and a magnetic field generator. The gas tube heater preheats the gas, the substrate holder and a plurality of the hot filaments heats the substrate, and the gas and substrate heating speed is accelerated by variously different heating systems, thereby saving much deposition time and greatly improving deposition efficiency. Matching with the electric field generator and the magnetic field generator, the ionization of applied gas in the reaction chamber is enhanced and the uniformity of the thickness of the deposited film on the surface of the substrate is increased. COPYRIGHT: (C)2008,JPO&INPIT
|
