METHOD OF PLASMA OXIDATION PROCESSING

摘要

The surface of a processing object is subjected to plasma oxidation processing using a plasma of 1OE0<SUP>12</SUP> cm<SUP>-3</SUP> orhigher O(<SUP>1</SUP>D<SUB>2</SUB>) radical density and using an oxygenous processing gas in a processing chamber of plasma processing apparatus, thereby forming a silicon oxide film. During the plasma oxidation processing, plasma processing condensations are corrected while measuring the density of O(<SUP>1</SUP>D<SUB>2</SUB>) radical in plasma by means of VUV monochrometer (63).