| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method for suppressing generation of slip dislocations, in the RTP processing of a silicon wafer. <P>SOLUTION: The heat treatment method of a silicon wafer has a process of stopping temperature elevation, for at least 10 seconds in the temperature range >700°C and <950°C, in order to prevent the generation of the slip dislocations in the process of rapid heating at least at either one of a part, where the silicon wafer is brought into contact with the support of a rapid heater and the outermost periphery of the silicon wafer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
