| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing system capable of subjecting the surface of a semiconductor wafer and surfaces of semiconductor wafers equally to processing even though it is comparatively simple in configuration. <P>SOLUTION: The semiconductor manufacturing system subjects two or more semiconductor substrates to plasma processing. The system is equipped with a processing vessel which is configured so as to be capable of being exhausted, a substrate holding jig that holds the semiconductor substrates which are introduced into the processing vessel in layers, a processing gas supply device for supplying a processing gas into the processing vessel, a plasma generating chamber which communicates with the processing vessel and generates plasma, an electron supply device for irradiating with electrons the semiconductor substrates held by the substrate holding jig in the processing vessel from the plasma generating chamber, and a rotating device for rotating the substrate holding jig in the processing vessel. <P>COPYRIGHT: (C)2008,JPO&INPIT |
