| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device achieving high reliability and high speed read-out, and a method of reading data, and a memory card mounted with the nonvolatile semiconductor memory device. <P>SOLUTION: The device includes a memory cell array having a plurality of NAND memory cell units including a plurality of memory cells and first and second selection transistors, a plurality of word lines and a plurality of bit lines, and a data read-out controller. The data read-out controller applies the read pass voltage to the non-selection memory cell other than the selection memory cell, when selecting one of the memory cells and reading out the data, then boosts the voltage applied to a control gate of the first and second selection transistors and, lowers the read pass voltage of the word line to be applied to the first and second selection transistors relating to the step-up and at least one to the adjacent non-selection memory cell than the read pass voltage of the word line to be applied to the other non-selection memory cell. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
