CRYSTAL GROWING METHOD, AND DEVICE USING TEMPERATURE-CONTROLLED PROCESS GAS

摘要

PROBLEM TO BE SOLVED: To solve the problem that, in conventional manner, when a material gas is supplied to a wafer with a crystal growing device whose crystal growth surface is turned downward used in a semiconductor manufacturing process, there is no tool for individually control the temperature of each material gas, so that it is difficult to set optimum film formation condition for improving the film formation efficiency and film formation quality. SOLUTION: By installing a gas cooling mechanism and a gas heating mechanism in a crystal growing chamber, each material gas is controlled at the optimum temperature to supply to the wafer. COPYRIGHT: (C)2008,JPO&INPIT