| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate capable of depositing a group III nitride on a substrate with a uniform coating thickness, maintaining high throughput, and manufacturing even a large-area substrate, to provide a manufacturing apparatus of a semiconductor substrate, and to provide the semiconductor substrate. SOLUTION: By applying pulse electron beams to a target 22 made of a group III metal or a group III-V compound to a nitrogen gas atmosphere, high kinetic energy can be given to atoms or molecules for composing the target as compared with a case where pulse laser beams are applied, and the plume of the atoms of a group III metal or the molecules of a group III-V compound can be formed in a wide range. The plume formed in a wide range is brought closer to the substrate, thus uniformly depositing a group III nitride thin film in a wide range of the substrate 32. COPYRIGHT: (C)2008,JPO&INPIT
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