| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that can be miniaturized and increased in the capacity. SOLUTION: The nonvolatile semiconductor storage device has primary insulating films 1b formed on a semiconductor substrate 1a, semiconductor layers 1c formed on the semiconductor substrate, such that they sandwich the primary insulating films, gate insulating films 2 formed on the semiconductor layers, floating gates 4<SB>1</SB>-4<SB>5</SB>formed on the gate insulating films, secondary insulating films 3 formed on the floating gates, a NAND column 10, where memory cell transistors M<SB>1</SB>-M<SB>5</SB>having control gates 5<SB>1</SB>-5<SB>5</SB>formed on the secondary insulating films 3 are serially connected in plural numbers, a source region 7, having an impurity diffused layer formed on the substrate at one end of the NAND column, and a drain region 8, having a metal electrode formed on the substrate at the other end of the NAND column. COPYRIGHT: (C)2008,JPO&INPIT
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