| 摘要 |
PROBLEM TO BE SOLVED: To provide an improvement method to stably grow a single crystal SiC to be epitaxial for a long period of time, and to provide the resulting high-quality single crystal SiC. SOLUTION: The method for producing the single crystal SiC comprises the steps of: disposing in a crucible 2 a susceptor 5 to which a SiC seed crystal 4 is fixed and a raw material supply tube 6 for supplying SiO<SB>2</SB>particles and carbon (C) particles which are raw materials for producing the single crystal SiC; and supplying the raw materials for producing the single crystal SiC onto the SiC seed crystal 4 in the crucible 2 in a high temperature environment through the raw material supply tube 6 with an inert carrier gas A to grow the single crystal SiC, wherein the molar ratio of SiO<SB>2</SB>to C, SiO<SB>2</SB>:C, is in the range of 1.05:3.0 to 2.0:3.0. There is also provided a single crystal SiC produced by the above method. COPYRIGHT: (C)2008,JPO&INPIT
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