| 摘要 |
<p>A phase change memory cell (12) including a memory element (12b) and a threshold device (12a) is read using a read current which does not threshold either the memory element (12b) or the threshold device (12a) in the case of both a set and a reset memory element. As a result, higher currents may be avoided, increasing read endurance. A sensing circuit (42,525) includes a charging rate detector (525) coupled to a selected address line (14) and sensing a rate of change of a voltage on the selected address line.</p> |
