| 摘要 |
<p>A material for forming a resist cover film for protecting a resist layer from a liquid used in liquid immersion lithography is provided to realize a high transmission to ArF excimer laser beams or F2 excimer laser beams, to prevent degradation of the resist layer, to allow exposure with high resolution, and to facilitate formation of a resist pattern. A material for forming a resist cover film(3) comprises, at least: a silicon-containing polymer essentially containing an alkali soluble group and represented by the formula of [SiO4/2]a[(R1tSiO(4-t)/2)b][O1/2R2]c, and an organic solvent capable of dissolving the silicon-containing polymer. In the formula, R1 is a monovalent organic group, H or OH; R2 is a monovalent organic group or H, wherein one or more R1 and R2 exist, at least one of R1 and R2 comprises an alkali soluble group' t is an integer of 1-3; and each of a, b and c represents the corresponding molar ratio, wherein each of a, b and c is equal to or greater than 0, with the proviso that a, b and c cannot represent 0 at the same time, and optionally two or more [R1tSiO(4-t)/2]b moieties are present.</p> |
