METHOD FOR FABRICATING A NARROW PATTERN IN A SEMICONDUCTOR

摘要

A method for forming a fine pattern of a semiconductor device is provided to form a pattern having a fine line width by forming an etching object with a thermal oxide layer. An etchant(102) and a polysilicon layer are formed on a silicon substrate(100). A first and second photoresist patterns are formed at a constant interval by using a first and second type photoresist. A polysilicon pattern is formed by etching a part of the polysilicon layer according to the first and second photoresist patterns. A thermal oxide layer is formed to surround the deformed polysilicon pattern and a periphery of the deformed polysilicon pattern. An etch process is performed to etch a part of the thermal oxide layer except for a sidewall of the deformed polysilicon pattern. An etching pattern including the thermal oxide layer is formed by removing the deformed polysilicon pattern. An etching object is etched by using the etching pattern as an etching mask. The etching pattern is removed.