WRITE VERIFY METHOD OF PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND PHASE CHANGE RANDOM ACCESS MEMORY DEVICE USING THE SAME

摘要

A write verify method of a phase change random access memory device and a phase change random access memory device using the same are provided to minimize write time by not using division write session. According to a write verify method of a phase change memory device including a number of phase change memory cells, numerous verify data are read and verified from the phase change memory cells. Fail phase change memory cells with the verify data different from the write data are found by comparing the verify data with the write data to be written into the phase change memory cell. During m divided write sessions, write data is written into the n fail phase change memory cells.