METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce defects due to stress and to enhance reliability by setting an optimum annealing condition. A method for manufacturing a semiconductor device includes an ion implantation process for implanting dopants onto a substrate. The method for manufacturing a semiconductor device includes further includes a drive-in process for performing a heat treatment process for the ion-implanted dopant. The heat treatment process is performed under a condition of temperature of 700 to 1000 ‹C during 20 to 40 minutes. A well region is formed by performing the drive-in process. The process temperature is inversely proportional to the process time.