Guard ring for semiconductor devices

摘要

A guard ring (122) is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact (110) is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.