发明名称 |
LARGE SIZE TRANSMITTANCE MODULATION(TM) BLANKMASK AND MANUFACTURING METHOD OF LARGE SIZE TRANSMITTANCE MODULATION(TM) PHOTOMASK |
摘要 |
<p>A large sized transmittance modulation blank mask and a method for manufacturing a large sized transmittance modulation photo mask using the same are provided to effectively protect a transparent substrate during a dry etching process by forming an etch stop layer between the transparent substrate and a transmittance control layer. A photoresist pattern(12) is formed by exposing and developing a transmission unit region in order to form a transmission unit and a shielding unit pattern. An anti-reflective layer(10) and a shielding layer(8) are etched by using the photoresist pattern as an etching mask. A transmittance control layer(6) is etched with a dry etching process. The remaining photoresist is removed. A photoresist is formed on the entire surface of the resultant structure on which the pattern is formed. A semi-transmission region is exposed and developed to form a semi-transmission layer. The semi-transmission layer is formed by etching the anti-reflective layer and the shielding layer using the photoresist pattern as an etching mask. The remaining photoresist layer is removed.</p> |
申请公布号 |
KR20080019996(A) |
申请公布日期 |
2008.03.05 |
申请号 |
KR20060082658 |
申请日期 |
2006.08.30 |
申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;CHA, HAN SUN;KANG, HYOUNG JONG;RYU, GI HUN |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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