发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to decrease a potential density and to improve crystalline and optical characteristics by forming grooves on an active layer. A substrate(11) for nitride single-crystal growing is prepared. An n-type nitride semiconductor layer(13) is grown on the substrate. One or more quantum barrier layers and one or more quantum well layers are alternatively grown on the n-type nitride semiconductor layer to form an active layer(14). One or more grooves(P) are formed on the active layer. A p-type nitride semiconductor layer(16) is grown on the active layer. The p-type nitride semiconductor layer having the active layer gap-fills the grooves. A depth of the groove is less than a thickness of the active layer.
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申请公布号 |
KR100809229(B1) |
申请公布日期 |
2008.03.05 |
申请号 |
KR20060114675 |
申请日期 |
2006.11.20 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHEONG, MYUNG GOO |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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