| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to prevent an HEIP(Hot Electron Induced Punchthrough) effect by removing a part of a linear nitride layer of a peripheral circuit region. A cell region(C) and a peripheral circuit region(P) of a semiconductor substrate(11) are etched to form trenches(T). A linear nitride layer(14) and a linear oxide layer are formed on the entire surface of the semiconductor substrate including the trenches. A first insulating layer having uniform thickness is formed on the linear oxide layer by performing a deposition process of an HDP(High Density Plasma) method. The nitride layer is partially removed from a sidewall of the trench of the peripheral region by performing an etch process of the HDP method. A second insulating layer is formed to bury the trenches. The linear nitride layer formed at a top end of the sidewall of the trench of the peripheral circuit region is rapidly etched according to an etching difference due to the pattern density.
|
