A method for forming a contact is provided to restrain the degradation of a lower pattern due to heat and the generation of a void and a seam inside a metal layer by forming a barrier layer in a contact hole with a sputtering method. A first metal layer(102) including tungsten(W) is formed on a substrate(100). An interlayer(104) is formed on the first metal layer. The interlayer dielectric has a contact hole for partially exposing the metal layer. A barrier layer(108) including tungsten nitride(WN) is formed on a sidewall of the contact hole by sputtering the exposed first metal layer under gas atmosphere containing nitrogen. A second metal layer(110) including tungsten is formed to gap-fill the contact hole on which the barrier layer is formed. The sputtering is performed with a plasma process using inert gas. The inert gas includes argon(Ar), nitrogen(N2), or helium(He). The barrier layer is formed under nitrogen or ammonia gas atmosphere.
申请公布号
KR20080020061(A)
申请公布日期
2008.03.05
申请号
KR20060082871
申请日期
2006.08.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
HONG, JONG WON;CHEONG, SEONG HWEE;LEE, SANG WOO;LEE, JONG MYEONG;YANG, SEUNG GIL