| 摘要 |
A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased. |
