THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A TFT substrate and a manufacturing method thereof are provided to increase the capacitance of a storage capacitor by reducing the thickness of an insulating film of an upper part of a storage electrode pattern and improve an open ratio by reducing the size of the storage electrode pattern. A method for manufacturing a TFT(Thin Film Transistor) substrate comprises the following steps of: forming an active pattern(1200) and a storage electrode pattern(1300) on a substrate(1100); forming a gate insulating film(1400) where a thickness of a storage electrode pattern upper side is thinner than a thickness of an active pattern upper side; and injecting impurity ion into the storage electrode pattern.