| 摘要 |
A TFT(Thin Film Transistor) for an LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to minimize exposure of electrode material during an intermediate process such as etching or ash for forming source and drain electrodes, thereby preventing damage of an electrode and simplifying processes. In a channel area on a substrate(100), a gate electrode is formed. After performing front deposition of a gate insulating film(101), an amorphous silicon layer, n+ amorphous silicon layer, source/drain metal layers are sequentially deposited in an upper part of the gate insulating layer. Plasma products disposed on the channel area, source and drain electrodes(121,122) of both sides of the plasma product, an ohmic contact layer(150) of lower parts of the source and drain electrodes, and a semiconductor layer(130) are formed by performing plasma processing and etching of the source/drain metal layers, the n+ amorphous silicon layer and the amorphous silicon layer. Front deposition of a transparent pixel electrode layer(140) is performed. A part of the pixel electrode layer disposed in an upper part of the plasma product and the plasma product are removed. After that, a part of the ohmic contact layer corresponding to the channel area is removed to expose a channel unit of the semiconductor layer. |
