| 摘要 |
A method for forming a contact of a semiconductor device is provided to increase contact volume and to lower a height of an epitaxial semiconductor layer by growing plural island-shaped epitaxial semiconductor layers on a predetermined semiconductor layer exposed through a contact hole. A gate(13) is formed on a semiconductor substrate(11). An interlayer dielectric is formed the entire surface of the semiconductor substrate to cover the gate. The interlayer dielectric is etched to form a contact hole for exposing the substrate. Plural island epitaxial silicon layers are grown on the exposed substrate of the contact hole. A conductive material is formed to gap-fill the contact hole. The size of each island-shaped epitaxial silicon layer is 0.1 to 20 nm or 1 to 20 nm. When the island-shaped epitaxial silicon layer is grown, the semiconductor substrate of the contact hole is oxidized. Silicon is deposited on the oxidized semiconductor substrate. A thermal process is performed on the resultant structure.
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