发明名称 |
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME |
摘要 |
In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation. |
申请公布号 |
EP1895579(A1) |
申请公布日期 |
2008.03.05 |
申请号 |
EP20060766995 |
申请日期 |
2006.06.20 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
KASU, MAKOTO;MAKIMOTO, TOSHIKI;UEDA, KENJI;YAMAUCHI, YOSHIHARU |
分类号 |
C23C16/27;C30B25/10;C30B29/04;C30B33/02;C30B33/06;H01L21/02;H01L21/04;H01L21/324;H01L21/331;H01L21/336;H01L21/338;H01L29/04;H01L29/16;H01L29/45;H01L29/66;H01L29/73;H01L29/732;H01L29/78;H01L29/786;H01L29/812;H01L33/00 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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